Room-temperature operation of highly functional single-electron transistor logic based on quantum mechanical effect in ultra-small silicon dot

This paper describes the room-temperature (RT) demonstration of a newly proposed highly-functional single-electron transistor (SET) logic based on the quantum mechanical effect. We fabricate single-hole transistors (SHTs) in the form of extremely constricted channel MOSFETs and obtain large Coulomb blockade (CB) oscillations W With the peak-to-valley current ratio (PVCR) of 10(2) at RT. In the fabricated single-dot SHTs, clear negative differential conductance (NDC) with the PVCR of 11.8 (highest ever reported) is also observed at RT because of the large quantum level spacing (DeltaE) in the ultrasmall dot. By combining CB and NDC, XOR operation is successfully demonstrated as a current output in just one SHT.