RF small-signal analysis of Schottky-barrier p-MOSFET

被引：29

作者：

Valentin, Raphael ^{[1
]}

Dubois, Emmanuel ^{[1
]}

Raskin, Jean-Pierre ^{[2
]}

Larrieu, Guilhem ^{[1
]}

Dambrine, Gilles ^{[1
]}

Lim, Tao Chuan ^{[1
]}

Breil, Nicolas ^{[3
]}

Danneville, Francois ^{[1
]}

机构：

[1] Inst Elect Microelect & Nanotechnol, Ctr Nacl Rech Sci, Unite Mixte Rech 8520, F-59652 Villeneuve Dascq, France

[2] Catholic Univ Louvain, Microwave Lab, B-1348 Louvain, Belgium

[3] STMicroelect, F-38926 Crolles, France

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2008年 / 55卷 / 05期

关键词：

high frequency (HF); MOSFETs; Schottky barrier (SB); silicon; silicon-on-insulator (SOI);

D O I：

10.1109/TED.2008.919382

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a detailed RF study for source/drain Schottky-barrier (SB) MOSFETs. Using on-wafer S-parameters, high-frequency (HF) figures-of-merit (FoMs) and small-signal equivalent circuits (SSEC) are first extracted and discussed for a 120-nm-gate-length SB MOSFET. Then, using ac simulations, HF FoM's sensitivity along SB height and underlap length variations are subsequently presented. The whole study provides, for SB MOSFETs, a deep understanding of key ac-element (transconductances and capacitances) behavior as well as process-parameter optimization to achieve the best HF FoMs.

引用

页码：1192 / 1202

页数：11

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