Oxide stoichiometry-controlled TaOx-based resistive switching behaviors

被引：15

作者：

Baek, Gwang Ho ^{[1
]}

Lee, Ah Rahm ^{[1
]}

Kim, Tae Yoon ^{[2
]}

Im, Hyun Sik ^{[3
]}

Hong, Jin Pyo ^{[1
,2
]}

机构：

[1] Hanyang Univ, Div Nanoscale Semicond Engn, Seoul 133791, South Korea

[2] Hanyang Univ, Res Inst Nat Sci, Dept Phys, Novel Funct Mat & Devices Lab, Seoul 133791, South Korea

[3] Dongguk Univ, Dept Semicond Sci, Seoul 100715, South Korea

来源：

APPLIED PHYSICS LETTERS | 2016年 / 109卷 / 14期

基金：

新加坡国家研究基金会;

关键词：

MECHANISMS; MEMORIES; STORAGE; MODEL;

D O I：

10.1063/1.4963884

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We examine the influence of variable oxygen concentration in TaOx active layers on the forming process and bipolar resistive switching (BRS) features of TaOx-based resistive switching cells. TaOx active layers prepared using various rf sputtering powers were systematically analyzed to identify the relation between initial compositions and BRS behavior. Proper control of oxygen vacancy concentration was clearly identified as a basic factor in ensuring typical BRS features without affecting the structural properties. We describe the possible origins of both conduction and switching based on the variation of oxygen concentrations initially provided by the growth conditions. Published by AIP Publishing.

引用

页数：5

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