Structural and optical properties of GaN thin films grown on Al2O3 substrates by MOCVD at different reactor pressures

被引：8

作者：

Guillen-Cervantes, A. ^{[1
]}

Rivera-Alvarez, Z. ^{[1
]}

Lopez-Lopez, M. ^{[1
]}

Ponce-Pedraza, A. ^{[2
]}

Guarneros, C. ^{[3
]}

Sanchez-Resendiz, V. M. ^{[3
]}

机构：

[1] CINVESTAV IPN, Dept Phys, Mexico City 07360, DF, Mexico

[2] Univ Texas San Antonio, Dept Phys & Astron, San Antonio, TX 78249 USA

[3] CINVESTAV IPN, Dept Elect Engn, Solid State Elect Sect, Mexico City 07360, DF, Mexico

来源：

APPLIED SURFACE SCIENCE | 2011年 / 258卷 / 03期

关键词：

MOCVD; Field-emission SEM; Hexagonal shaped pits; Surface spirals; Photoluminescence; SURFACE MORPHOLOGIES; RAMAN; MICROSCOPY;

D O I：

10.1016/j.apsusc.2011.09.089

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

GaN thin films grown by MOCVD on (0 0 0 1) Al2O3 substrates at different growth pressures were characterized by field-emission scanning electron microscopy, atomic force microscopy, micro-Raman, and photoluminescence at room temperature. It was found that there is an optimum pressure of 76 Torr at which the structural and optical properties of the GaN samples are superior. On the other hand samples grown at higher pressure exhibited hexagonal surface pits and surface spirals. The results showed that the growth pressure strongly influences the morphology, and significantly affects the structural and optical properties of the GaN epilayers. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：1267 / 1271

页数：5

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