A high-linearity S-band SiGe HBT low-noise amplifier design

被引：0

作者：

Yang Zong-shuai ^{[1
,2
]}

Niehai ^{[1
]}

Han Wen-tao ^{[2
]}

机构：

[1] Chengdu Univ Informat Technol, Chengdu 610000, Peoples R China

[2] Beijing Age Long Sci & Technol Ltd, Chengdu 610000, Peoples R China

来源：

2013 INTERNATIONAL WORKSHOP ON MICROWAVE AND MILLIMETER WAVE CIRCUITS AND SYSTEM TECHNOLOGY (MMWCST) | 2013年

关键词：

low noise amplifiers; SiGe HBT; resistor feedback; high-linearity; s-band;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 2.1 similar to 2.5GHz SiGe HBT low-noise amplifier (LNA) with highly linearity and low-noise is described. The LNA is designed with a novel resistor feedback bias circuit structure which be aimed to obtain excellent linearity performance. On-chip balun is used for single-to-differential conversion between the LNA and the down-conversion mixer. The simulated results show that the transmission gain is 11.9dB with less than 0.3dB variation in 60M frequency range, noise figure varies between 1.9 and 2.1 dB, input reflection (S11) is less than -16.3dB and the OP1dB is more than 16dBm over the entire band. Power dissipation is 60mW at 5V supply.

引用

页码：308 / 311

页数：4

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