Growth of Tensile Strained Poly Germanium Thin Film on Glass Substrates by High Speed Continuous Wave Laser Annealing, and its Application to Germanium-Tin

被引：7

作者：

Matsumura, Ryo ^{[1
]}

Fukata, Naoki ^{[2
]}

机构：

[1] Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton, Tsukuba, Ibaraki 3050044, Japan

[2] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

来源：

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2020年 / 9卷 / 06期

关键词：

Germanium; Germanium tin; laser annealing; Thin film; CRYSTAL; GE;

D O I：

10.1149/2162-8777/aba4f1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

To realize next generation electronics, liquid phase crystallization of germanium based materials on quartz substrates is investigated by continuous wave laser annealing system which enables microsecond annealing. As a result, large grain polycrystalline germanium thin film with similar to 0.6% tensile strain has successfully grown on quartz substrates. Moreover, we have applied this method on germanium-tin thin film growth and realized germanium-tin crystals with high substitutional tin concentration (up to similar to 13%). By using these films, modulation phenomena of tin concentration in the crystals depending on annealing time were observed. From the phenomena, we could also closely discuss about strong correlation of substitutional Sn concentration on Raman signals. These findings and discussions will facilitate the study of germanium-tin thin film growth and characterization.

引用

页数：5

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