A novel method for in situ growing Ge-rich polycrystalline SiGe thin films on glass at low temperature

被引：6

作者：

Tao, Ke ^{[1
]}

Wang, Jin ^{[2
]}

Jia, Rui ^{[1
]}

Sun, Yun ^{[1
]}

Jin, Zhi ^{[1
]}

Lin, Xinyu ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China

[2] Nankai Univ, Coll Elect Informat & Opt Engn, Tianjin 300071, Peoples R China

来源：

SCRIPTA MATERIALIA | 2015年 / 107卷

关键词：

Polycrystalline SiGe thin film; Glass substrate; Low temperature; SOLAR-CELLS; GERMANIUM; CRYSTALLIZATION; GROWTH;

D O I：

10.1016/j.scriptamat.2015.05.030

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this paper, a novel method has been presented to fabricate Ge-rich poly-SiGe thin films on glass by chemical vapor deposition at temperatures as low as 300 degrees C. The nucleation mechanism of Ge on insulator has been investigated and the crystal quality of poly-SiGe has been confirmed by Raman spectra, XRD and TEM analyses. The results indicate that the poly-SiGe thin films fabricated by this method are applicable for SiGe-based electronic and optical devices on inexpensive substrates. Moreover, fabrication of high quality poly-SiGe thin films on a-Si thin film enables the application in multi-junction solar cell as the bottom cell. (C) 2015 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

引用

页码：100 / 102

页数：3

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