Suppression of hole-mediated ferromagnetism in Ga1-xMnxP by hydrogen

被引：9

作者：

Bihler, C. ^{[1
]}

Kraus, M. ^{[1
]}

Brandt, M. S. ^{[1
]}

Goennenwein, S. T. B. ^{[2
]}

Opel, M. ^{[2
]}

Scarpulla, M. A. ^{[3
,4
]}

Farshchi, R. ^{[3
,4
]}

Estrada, D. M. ^{[3
,4
]}

Dubon, O. D. ^{[3
,4
]}

机构：

[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

[2] Bayer Akad Wissensch, Walther Meissner Inst, D-85748 Garching, Germany

[3] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA

[4] Lawrence Berkeley Natl Lab, Berkeley, CA 94720 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2008年 / 104卷 / 01期

关键词：

D O I：

10.1063/1.2952045

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the passivation of the Mn acceptors in Ga1-xMnxP upon exposure to a hydrogen plasma. The as-grown films are nonmetallic and ferromagnetic with a Curie temperature of T-C=55 K. After hydrogenation the sample resistivity increases by approximately three orders of magnitude at room temperature and six orders of magnitude at 25 K. Furthermore, the hydrogenated samples are paramagnetic, which is evidenced by a magnetization curve at 5 K that is best described by a Brillouin function with g=2 and J=5/2 expected for Mn atoms in the 3d(5) configuration. Upon annealing, partial depassivation and a recovery of ferromagnetism are observed. These observations unambiguously demonstrate that the ferromagnetism in Ga1-xMnxP is carrier-mediated similar to Ga1-xMnxAs. (C) 2008 American Institute of Physics.

引用

页数：5

共 32 条

[1] Suppression of hole-mediated ferromagnetism in Ga1-xMn xP by hydrogen
Bihler, C.
Kraus, M.
Brandt, M.S.
Goennenwein, S.T.B.
Opel, M.
Scarpulla, M.A.
Farshchi, R.
Estrada, D.M.
Dubon, O.D.
Journal of Applied Physics, 2008, 104 (01):
[2] Compositional tuning of ferromagnetism in Ga1-xMnxP
Farshchi, R.
Scarpulla, M. A.
Stone, P. R.
Yu, K. M.
Sharp, I. D.
Beeman, J. W.
Silvestri, H. H.
Reichert, L. A.
Haller, E. E.
Dubon, O. D.
SOLID STATE COMMUNICATIONS, 2006, 140 (9-10) : 443 - 446
[3] Antisite effect on hole-mediated ferromagnetism in (Ga,Mn)As
Myers, R. C.
Sheu, B. L.
Jackson, A. W.
Gossard, A. C.
Schiffer, P.
Samarth, N.
Awschalom, D. D.
PHYSICAL REVIEW B, 2006, 74 (15)
[4] Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors
Dietl, T
Ohno, H
Matsukura, F
PHYSICAL REVIEW B, 2001, 63 (19)
[5] Robust half-metallicity in Ga1-xMnxP and Ga1-xMnxAs
Ahmad, Iftikhar
Amin, B.
COMPUTATIONAL MATERIALS SCIENCE, 2013, 68 : 55 - 60
[6] Compensation-dependence of magnetic and electrical properties in Ga1-xMnxP
Winkler, T. E.
Stone, P. R.
Li, Tian
Yu, K. M.
Bonanni, A.
Dubon, O. D.
APPLIED PHYSICS LETTERS, 2011, 98 (01)
[7] Hole-mediated ferromagnetism in GaN doped with Cu and Mn
G. Guzmán
D. Maestre
M. Herrera
Journal of Materials Science: Materials in Electronics, 2020, 31 : 15070 - 15078
[8] Hole-mediated ferromagnetism in GaN doped with Cu and Mn
Guzman, G.
Maestre, D.
Herrera, M.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2020, 31 (18) : 15070 - 15078
[9] Hole-mediated ferromagnetism in coupled semimagnetic quantum dots
Villegas-Lelovsky, L.
Qu, Fanyao
Massa, L. O.
Lopez-Richard, V.
Marques, G. E.
PHYSICAL REVIEW B, 2011, 84 (07)
[10] Ferromagnetism in Ga1-xMnxP:: Evidence for inter-Mn exchange mediated by localized holes within a detached impurity band -: art. no. 207204
Scarpulla, MA
Cardozo, BL
Farshchi, R
Oo, WMH
McCluskey, MD
Yu, KM
Dubon, OD
PHYSICAL REVIEW LETTERS, 2005, 95 (20)

← 1 2 3 4 →