Suppression of hole-mediated ferromagnetism in Ga1-xMnxP by hydrogen

被引：9

作者：

Bihler, C. ^{[1
]}

Kraus, M. ^{[1
]}

Brandt, M. S. ^{[1
]}

Goennenwein, S. T. B. ^{[2
]}

Opel, M. ^{[2
]}

Scarpulla, M. A. ^{[3
,4
]}

Farshchi, R. ^{[3
,4
]}

Estrada, D. M. ^{[3
,4
]}

Dubon, O. D. ^{[3
,4
]}

机构：

[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

[2] Bayer Akad Wissensch, Walther Meissner Inst, D-85748 Garching, Germany

[3] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA

[4] Lawrence Berkeley Natl Lab, Berkeley, CA 94720 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2008年 / 104卷 / 01期

关键词：

D O I：

10.1063/1.2952045

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the passivation of the Mn acceptors in Ga1-xMnxP upon exposure to a hydrogen plasma. The as-grown films are nonmetallic and ferromagnetic with a Curie temperature of T-C=55 K. After hydrogenation the sample resistivity increases by approximately three orders of magnitude at room temperature and six orders of magnitude at 25 K. Furthermore, the hydrogenated samples are paramagnetic, which is evidenced by a magnetization curve at 5 K that is best described by a Brillouin function with g=2 and J=5/2 expected for Mn atoms in the 3d(5) configuration. Upon annealing, partial depassivation and a recovery of ferromagnetism are observed. These observations unambiguously demonstrate that the ferromagnetism in Ga1-xMnxP is carrier-mediated similar to Ga1-xMnxAs. (C) 2008 American Institute of Physics.

引用

页数：5

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