Influence of molybdenum bottom electrodes on crystal growth of aluminum nitride thin films

被引：31

作者：

Kamohara, Toshihiro ^{[1
]}

Akiyama, Morito ^{[1
]}

Kuwano, Noriyuki ^{[2
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Measurement Solut Res Ctr, Saga 8410052, Japan

[2] Kyushu Univ, Arts Sci & Technol Ctr Cooperat Res, Fukuoka 8168580, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2008年 / 310卷 / 02期

关键词：

growth mechanism; transmission electron microscopy; X-ray diffraction; reactive sputtering; AlN film;

D O I：

10.1016/j.jcrysgro.2007.10.033

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The authors have found that molybdenum (Mo) bottom electrodes strongly influence the crystal growth of aluminum nitride (AlN) thin films. AlN films were prepared on Si, Mo/Si and Mo/AlN-interlayer/Si substrates. The crystal orientation and microstructure of AlN films prepared on Si substrates strongly depend on sputtering pressure. On the other hand, the crystal orientation and microstructure of AlN films prepared on Mo/Si and Mo/AlN-interlayer/Si hardly depends on sputtering pressure. The local epitaxial growth of AlN films is observed in an almost random texture, and the crystal orientation of the Mo electrodes strongly influences that of the AlN films. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：345 / 350

页数：6

共 27 条

[1] Statistical approach for optimizing sputtering conditions of highly oriented aluminum nitride thin films [J].

Akiyama, M ;

Xu, CN ;

Nonaka, K ;

Shobu, K ;

Watanabe, T .

THIN SOLID FILMS, 1998, 315 (1-2) :62-65

[2] Influence of metal electrodes on crystal orientation of aluminum nitride thin films [J].

Akiyama, M ;

Nagao, K ;

Ueno, N ;

Tateyama, H ;

Yamada, T .

VACUUM, 2004, 74 (3-4) :699-703

[3] The influence of deposition conditions on structure and morphology of aluminum nitride films deposited by radio frequency reactive sputtering [J].

Cheng, H ;

Sun, Y ;

Hing, P .

THIN SOLID FILMS, 2003, 434 (1-2) :112-120

[4] Preparation of [002] oriented AlN thin films by mid frequency reactive sputtering technique [J].

Cheng, HE ;

Lin, TC ;

Chen, WC .

THIN SOLID FILMS, 2003, 425 (1-2) :85-89

[5] Stress and piezoelectric properties of aluminum nitride thin films deposited onto metal electrodes by pulsed direct current reactive sputtering [J].

Dubois, MA ;

Muralt, P .

JOURNAL OF APPLIED PHYSICS, 2001, 89 (11) :6389-6395

[6] Structural and electroacoustic studies of AIN thin films during low temperature radio frequency sputter deposition [J].

Engelmark, F ;

Iriarte, GF ;

Katardjiev, IV ;

Ottosson, M ;

Muralt, P ;

Berg, S .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2001, 19 (05) :2664-2669

[7] Synthesis of highly oriented piezoelectric AlN films by reactive sputter deposition [J].

Engelmark, F ;

Fucntes, G ;

Katardjiev, IV ;

Harsta, A ;

Smith, U ;

Berg, S .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2000, 18 (04) :1609-1612

[8] Microstructure and preferred orientation in rf sputter deposited AlN thin film [J].

Fujiki, M ;

Takahashi, M ;

Kikkawa, S ;

Kanamaru, F .

JOURNAL OF MATERIALS SCIENCE LETTERS, 2000, 19 (18) :1625-1627

[9] STRESS DEPENDENCE OF REACTIVELY SPUTTERED ALUMINUM NITRIDE THIN-FILMS ON SPUTTERING PARAMETERS [J].

HUFFMAN, GL ;

FAHNLINE, DE ;

MESSIER, R ;

PILIONE, LJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (03) :2252-2255

[10] INITIAL GROWTH OF TIN ON DIFFERENT PHASES OF HIGH-SPEED STEEL [J].

HULTMAN, L ;

HENTZELL, HTG ;

SUNDGREN, JE ;

JOHANSSON, BO ;

HELMERSSON, U .

THIN SOLID FILMS, 1985, 124 (02) :163-170

← 1 2 3 →