Optical study of disorder and defects in hydrogenated amorphous silicon carbon alloys

被引:9
作者
Nguyen-Tran, T [1 ]
Suendo, V [1 ]
Cabarrocas, PRI [1 ]
机构
[1] Ecole Polytech, CNRS, UMR 7647, Phys Interfaces & Couches Minces Lab, F-91128 Palaiseau, France
关键词
D O I
10.1063/1.1968413
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have studied the defect density and disorder in hydrogenated amorphous silicon carbon alloys produced by rf glow discharge of silane-methane-hydrogen mixtures, by combining spectroscopic ellipsometry and photothermal deflection spectroscopy measurements. Increasing the methane flow rate leads to a widening of the optical gap and to an increase of the apparent disorder, deduced from the standard analysis of the exponential absorption edge; the so-called Urbach energy. Interestingly, the subgap absorption decreases with increasing methane flow rate. This points towards a lower density of defects with increasing carbon content and is in contrast with the increased disorder. This apparent contradiction results from the presence of three absorption bands within the gap of this material, as reported by [Ivashchenko , J. Phys.: Condens. Matter 14, 1799 (2002)], and which make unreliable the standard analysis of the disorder in silicon carbon alloys. (c) 2005 American Institute of Physics.
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共 12 条
[1]   EQUILIBRIUM DENSITY OF DEFECTS IN HYDROGENATED AMORPHOUS-SILICON CARBON ALLOYS [J].
ALVAREZ, F ;
SEBASTIANI, M .
JOURNAL OF APPLIED PHYSICS, 1992, 71 (12) :5969-5975
[2]   ELECTRONIC AND OPTICAL-PROPERTIES OF A-SI1-XCX FILMS PREPARED FROM A H2-DILUTED MIXTURE OF SIH4 AND CH4 [J].
BAKER, SH ;
SPEAR, WE ;
GIBSON, RAG .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1990, 62 (02) :213-223
[3]   THERMOOPTICAL SPECTROSCOPY - DETECTION BY THE MIRAGE EFFECT [J].
BOCCARA, AC ;
FOURNIER, D ;
BADOZ, J .
APPLIED PHYSICS LETTERS, 1980, 36 (02) :130-132
[4]   DENSITY OF GAP STATES IN A-SIC-H FILMS BY MEANS OF PHOTOCONDUCTIVE AND PHOTOTHERMAL SPECTROSCOPIES [J].
DEMICHELIS, F ;
GIORGIS, F ;
PIRRI, CF ;
TRESSO, E ;
AMATO, G ;
COSCIA, U .
PHYSICA B-CONDENSED MATTER, 1995, 205 (02) :169-174
[5]   Disorder and Urbach energy in hydrogenated amorphous carbon: A phenomenological model [J].
Fanchini, G ;
Tagliaferro, A .
APPLIED PHYSICS LETTERS, 2004, 85 (05) :730-732
[6]   Gap states in a-SiC from optical measurements and band structure models [J].
Ivashchenko, VI ;
Shevchenko, VI ;
Rusakov, GV ;
Klymenko, AS ;
Popov, VM ;
Ivashchenko, LA ;
Bogdanov, EI .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2002, 14 (08) :1799-1812
[7]   DIRECT MEASUREMENT OF GAP-STATE ABSORPTION IN HYDROGENATED AMORPHOUS-SILICON BY PHOTOTHERMAL DEFLECTION SPECTROSCOPY [J].
JACKSON, WB ;
AMER, NM .
PHYSICAL REVIEW B, 1982, 25 (08) :5559-5562
[8]   Parameterization of the optical functions of amorphous materials in the interband region [J].
Jellison, GE ;
Modine, FA .
APPLIED PHYSICS LETTERS, 1996, 69 (03) :371-373
[9]   DEPOSITION OF DIAMOND-LIKE CARBON [J].
ROBERTSON, J .
PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES, 1993, 342 (1664) :277-286
[10]   INFLUENCE OF DISORDER ON THE ELECTRONIC-STRUCTURE OF AMORPHOUS-SILICON [J].
SINGH, J .
PHYSICAL REVIEW B, 1981, 23 (08) :4156-4168