Plasticity and deformation microstructure of 4H-SiC below the brittle-to-ductile transition

被引:22
作者
Mussi, A. [1 ]
Rabier, J. [1 ]
Thilly, L. [1 ]
Demenet, J. L. [1 ]
机构
[1] Univ Poitiers, SP2MI, CNRS UMR 6630, Met Phys Lab, Av M et P Curie, F-86962 Futuroscope, France
来源
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 8 | 2007年 / 4卷 / 08期
关键词
D O I
10.1002/pssc.200675438
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Compression tests under confining pressure are performed with a Paterson press in order to deform 4H-SiC plastically below the brittle-to-ductile transition temperature. Deformation microstructure in this regime is analysed using conventional and high resolution transmission electron microscopy and is compared with literature. Leading partial dislocations with carbon core and silicon core are observed on basal plane as well as perfect dislocations out of the basal plane. Double stacking faults are evidenced in the deformed microstructure. These original observations indicate that the deformation microstructures of 4H-SiC in the brittle domain are more complex than previously reported.
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页码:2929 / +
页数:2
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