Characteristics of residual stress in Mo-Ti functionally graded material with a continuous change of composition

被引：7
作者：
Yang, ZM [1 ]
Zhou, ZG
Zhang, LM
机构：
[1] Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Lab Laser Glass, Shanghai 201800, Peoples R China
来源：
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING | 2003年 / 358卷 / 1-2期
关键词：
functionally graded material; Mo-Ti composite; thermal stress;
D O I：
10.1016/S0921-5093(03)00291-0
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
With the addition of the sintering additives Ni and Cu, highly dense Mo-Ti alloys with various Mo:Ti ratios were obtained by hot-pressing method. Under the same conditions a Mo-Ti green body with continuously graded composition, formed by the particle settling method, was sintered. The longitudinal and transverse ultrasonic velocities of Mo-Ti alloys were tested in order to calculate the residual stresses that develop during cooling of the Mo-Ti functionally graded material (FGM). By using an axisymmetric finite element method, the fabricated thermal stress in a disk-shaped Mo-Ti FGM was calculated. The results show that the residual stress continuously changes with the smooth change of graded composition and the maximum value of residual tensile stress is far lower than that of the bending strength of Mo-Ti alloys. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码：214 / 218
页数：5
相关论文
共 14 条
[1]  
BERNHARDT R, 1998, MATER SCI FORUM, V308, P31
[2]  
HUANG JH, 1998, CHINESE SCI BULL, V550, P5
[3]  
JING FQ, 1986, INTRO EXPT STATE EQU, P7
[4]  
KAPELSKI G, 2000, CERAM T, V114, P397
[5]  
KESLER O, 1998, MATER SCI FORUM, V308, P389
[6]  
NOMURA N, 2000, CERAM T, V114, P223
[7]   Fabrication of W-Mo-Ti system flier-plate with graded impedance for generating quasi-isentropic compression [J].
Shen, Q ;
Zhang, LM ;
Xiong, HP ;
Hua, JS ;
Tan, H .
CHINESE SCIENCE BULLETIN, 2000, 45 (15) :1421-1424
[8]  
Xiong HP, 1999, T NONFERR METAL SOC, V9, P582
[9]  
Yang ZM, 2000, T NONFERR METAL SOC, V10, P761
[10]  
Yang ZM, 2001, J MATER SCI TECHNOL, V17, P275
12