Fabrication of ultra-sensitive photoelectrochemical aptamer biosensor: Based on semiconductor/DNA interfacial multifunctional reconciliation via 2D-C3N4

被引:62
作者
Li, Yang [1 ]
Bu, Yuyu [1 ]
Jiang, Fengqiu [1 ]
Dai, Xianying [1 ]
Ao, Jin-Ping [1 ]
机构
[1] Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R China
基金
中国国家自然科学基金;
关键词
PEC aptamer biosensor; 2D-C3N4; interlayer; Semiconductor/DNA interface reconciliation; Ultrahigh sensitivity; Charge transfer; MICROCYSTIN-LR; CARBON NITRIDE; CONVERSION; SENSOR;
D O I
10.1016/j.bios.2019.111903
中图分类号
Q6 [生物物理学];
学科分类号
071011 ;
摘要
In this work, we fabricate a novel bismuth vanadate/two dimensional-carbon nitride/deoxyribonucleic acid (BiVO4/2D-C3N4/DNA) aptamer photoelectrochemical (PEC) sensor, and this sensor provides a record detection sensitivity area (5 x 10(-7) mu g/L - 10 mu g/L) for Microcystin-LR (MC-LR). Meanwhile, except for MC-LR detection, this sensor presents highly sensitivity for tumor marker, heavy metal ion, antibiotic also by changing the DNA aptamer. Photo charge dynamic and theory calculation results reveal that 2D-C3N4 is a key material for multifunctional interface reconciliation of this PEC aptamer sensor. Firstly, it can serve as photogenerated hole oriented-transfer medium from the BiVO4 photoanode to the detective target; In addition, 2D-C3N4 with large area of pi electron cloud can fix the DNA aptamer parallelly by pi-pi bonding with the nucleic acid in the DNA aptamer to shorten the hole transfer distance from the semiconductor to target. So that, a record MC-LR detection sensitivity has been achieved by the 2D-C3N4 modified BiVO4/DNA aptamer sensor.
引用
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页数:9
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