A 13.56-Mbps Pulse Delay Modulation Based Transceiver for Simultaneous Near-Field Data and Power Transmission

被引:70
作者
Kiani, Mehdi [1 ]
Ghovanloo, Maysam [1 ]
机构
[1] Georgia Inst Technol, Sch Elect & Comp Engn, GT Bion Lab, Atlanta, GA 30308 USA
基金
美国国家卫生研究院; 美国国家科学基金会;
关键词
Implantable medical devices; impulse radio; inductive coupling; near-field transceiver; neuroprostheses; pulse delay modulation; wireless power transmission; WIRELESS LINK; BAND POWER; SYSTEM; OPTIMIZATION; INTERFACE; RECEIVER; COILS; CHIP;
D O I
10.1109/TBCAS.2014.2304956
中图分类号
R318 [生物医学工程];
学科分类号
0831 ;
摘要
A fully-integrated near-field wireless transceiver has been presented for simultaneous data and power transmission across inductive links, which operates based on pulse delay modulation (PDM) technique. PDM is a low-power carrier-less modulation scheme that offers wide bandwidth along with robustness against strong power carrier interference, which makes it suitable for implantable neuroprosthetic devices, such as retinal implants. To transmit each bit, a pattern of narrow pulses are generated at the same frequency of the power carrier across the transmitter (Tx) data coil with specific time delays to initiate decaying ringing across the tuned receiver (Rx) data coil. This ringing shifts the zero-crossing times of the undesired power carrier interference on the Rx data coil, resulting in a phase shift between the signals across Rx power and data coils, from which the data bit stream can be recovered. A PDM transceiver prototype was fabricated in a 0.35-mu m standard CMOS process, occupying 1.6 mm(2). The transceiver achieved a measured 13.56 Mbps data rate with a raw bit error rate (BER) of 4.3 X 10(-7) at 10 mm distance between figure-8 data coils, despite a signal-to-interference ratio (SIR) of -18.5 dB across the Rx data coil. At the same time, a class-D power amplifier, operating at 13.56 MHz, delivered 42 mW of regulated power across a separate pair of high-Q power coils, aligned with the data coils. The PDM data Tx and Rx power consumptions were 960 pJ/bit and 162 pJ/bit, respectively, at 1.8 V supply voltage.
引用
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页码:1 / 11
页数:11
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