Incorporation of self assembled In-rich InGaN nanostructure to achieve redshift in InGaN/GaN heterostructures

被引：5

作者：

Soh, C. B. ^{[1
]}

Hartono, H. ^{[2
]}

Chen, P. ^{[1
]}

Chua, S. J. ^{[1
,2
]}

机构：

[1] Inst Mat Res & Engn, 3 Res Link, Singapore 117602, Singapore

[2] Natl Univ Singapore, Singapore MIT Alliance, Singapore 117576, Singapore

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4 NO 7 2007 | 2007年 / 4卷 / 07期

关键词：

D O I：

10.1002/pssc.200674797

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The epitaxy growth of InGaN/GaN MQWs posed a great challenge, especially when high In content have to be incorporated for long wavelength applications such as the cyan and green LEDs. To realize devices with superior characteristic, In-rich InGaN nanostrucutres (QDs) have been fabricated using InGaN wetting layer and trimethylIndium treatment in InGaN well. In InGaN QWs, nanometer scale fluctuation of the indium, nanostructures can lead to "QD-like" states which act as nucleation site to enhance In incorporation. This leads to red-shift in PL dominant peak emission and a broadening of PL spectrum at its higher wavelength.

引用

页码：2433 / +

页数：2

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