ac dynamics of ferroelectric domains from an investigation of the frequency dependence of hysteresis loops

被引:118
作者
Yang, S. M. [1 ]
Jo, J. Y. [1 ]
Kim, T. H. [1 ]
Yoon, J. -G. [2 ]
Song, T. K. [3 ]
Lee, H. N. [4 ]
Marton, Z. [4 ,5 ]
Park, S. [6 ]
Jo, Y. [6 ]
Noh, T. W. [1 ]
机构
[1] Seoul Natl Univ, Dept Phys & Astron, ReCFI, Seoul 151747, South Korea
[2] Univ Suwon, Dept Phys, Hwaseong 445743, Gyunggi Do, South Korea
[3] Changwon Natl Univ, Sch Nano & Adv Mat Engn, Chang Won 641773, Gyeongnam, South Korea
[4] Oak Ridge Natl Lab, Div Mat Sci & Technol, Oak Ridge, TN 37831 USA
[5] Univ Penn, Dept Mat Sci & Engn, Philadelphia, PA 19104 USA
[6] Korea Basic Sci Inst, Div Mat Sci, Taejon 305333, South Korea
来源
PHYSICAL REVIEW B | 2010年 / 82卷 / 17期
关键词
THIN-FILMS; WALL DYNAMICS; NUCLEATION; REVERSAL; KINETICS; GROWTH;
D O I
10.1103/PhysRevB.82.174125
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We investigated the pinning dominated domain-wall dynamics under an ac field by studying the frequency (f) dependence of hysteresis loops of a uniaxial ferroelectric (FE) system. We measured the fully saturated polarization-electric field (P-E) hysteresis loops of high-quality epitaxial 100-nm-thick PbZr0.2Ti0.8O3 capacitors at various f (5-2000 Hz) and temperatures T (10-300 K). We observed that the coercive field EC is proportional to f(beta) with two scaling regions, which was also reported earlier in magnetic systems [T. A. Moore and J. A. C. Bland, J. Phys.: Condens. Matter 16, R1369 (2004), and references therein]. In addition, we observed that the two scaling regions of EC vs f exist at all measured T. We found that the existence of the two scaling regions should come from a dynamic crossover between the creep and flow regimes of the FE domain-wall motions. By extending the theory of Nattermann et al., which was originally proposed for impure magnet systems [T. Nattermann, V. Pokrovsky, and V. M. Vinokur, Phys. Rev. Lett. 87, 197005 (2001)], to the disordered FE systems, we obtained analytical expressions for the dynamic crossovers between the relaxation and creep, and between the creep and flow regimes. By comparing with the experimental data from our fully saturated P-E hysteresis loop measurements, we could construct a T-E dynamic phase diagram with f as a parameter for hysteretic FE domain dynamics in the presence of an ac field.
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页数:7
相关论文
共 30 条
[1]   Granulation, Phase Change, and Microstructure - Kinetics of Phase Change. III [J].
Avrami, M .
JOURNAL OF CHEMICAL PHYSICS, 1941, 9 (02) :177-184
[2]   Creep and relaxation dynamics of domain walls in periodically poled KTiOPO4 -: art. no. 117601 [J].
Braun, T ;
Kleemann, W ;
Dec, J ;
Thomas, PA .
PHYSICAL REVIEW LETTERS, 2005, 94 (11) :1-4
[3]   Domain wall relaxation, creep, sliding, and switching in superferromagnetic discontinuous Co80Fe20/Al2O3 multilayers -: art. no. 137203 [J].
Chen, X ;
Sichelschmidt, O ;
Kleemann, W ;
Petracic, O ;
Binek, C ;
Sousa, JB ;
Cardoso, S ;
Freitas, PP .
PHYSICAL REVIEW LETTERS, 2002, 89 (13)
[4]   Physics of thin-film ferroelectric oxides [J].
Dawber, M ;
Rabe, KM ;
Scott, JF .
REVIEWS OF MODERN PHYSICS, 2005, 77 (04) :1083-1130
[5]  
Du XF, 1998, MATER RES SOC SYMP P, V493, P311
[6]   THE SURFACE STATISTICS OF A GRANULAR AGGREGATE [J].
EDWARDS, SF ;
WILKINSON, DR .
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES, 1982, 381 (1780) :17-31
[7]   Surface-stimulated nucleation of reverse domains in ferroelectrics [J].
Gerra, G ;
Tagantsev, AK ;
Setter, N .
PHYSICAL REVIEW LETTERS, 2005, 94 (10) :1-4
[8]   High resolution study of domain nucleation and growth during polarization switching in Pb(Zr,Ti)O3 ferroelectric thin film capacitors [J].
Hong, S ;
Colla, EL ;
Kim, E ;
Taylor, DV ;
Tagantsev, AK ;
Muralt, P ;
No, K ;
Setter, N .
JOURNAL OF APPLIED PHYSICS, 1999, 86 (01) :607-613
[9]   A THEORY OF D-E HYSTERESIS LOOP - APPLICATION OF AVRAMI MODEL [J].
ISHIBASHI, Y ;
ORIHARA, H .
INTEGRATED FERROELECTRICS, 1995, 9 (1-3) :57-61
[10]   Direct imaging of the spatial and energy distribution of nucleation centres in ferroelectric materials [J].
Jesse, Stephen ;
Rodriguez, Brian J. ;
Choudhury, Samrat ;
Baddorf, Arthur P. ;
Vrejoiu, Ionela ;
Hesse, Dietrich ;
Alexe, Marin ;
Eliseev, Eugene A. ;
Morozovska, Anna N. ;
Zhang, Jingxian ;
Chen, Long-Qing ;
Kalinin, Sergei V. .
NATURE MATERIALS, 2008, 7 (03) :209-215