Challenges and potential payoff for crystalline oxides in wide bandgap semiconductor technology

被引：33

作者：

Doolittle, WA ^{[1
]}

Namkoong, G ^{[1
]}

Carver, AG ^{[1
]}

Brown, AS ^{[1
]}

机构：

[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

来源：

SOLID-STATE ELECTRONICS | 2003年 / 47卷 / 12期

关键词：

crystalline oxides; wide bandgap semiconductor; GaN; AlN; InN; SiC and lithium niobate;

D O I：

10.1016/S0038-1101(03)00187-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

While growth of wide bandgap semiconductor materials on crystalline oxides (sapphire, lithium gallate, lithium aluminate, zinc oxide and others) has become routine, growth of crystalline oxides on wide bandgap, materials remains challenging and minimally explored. The potential payoff in terms of enhanced device performance, increased functionality and reliability warrants examining this option. This presentation aims at targeting key areas, where crystalline oxides could improve wide bandgap semiconductor device performance. Some of these include the use of ferroelectric oxides for power switching applications, oxides with anisotropic dielectric constants for high voltage termination and oxides with large electric flux density near breakdown. Unique polarization engineered structures are described that are enabled by using lithographically defined poled regions in a ferroelectric substrate. The desired crystalline oxide properties, potential implementation challenges and potential pitfalls will be discussed. (C) 2003 Published by Elsevier Ltd.

引用

页码：2143 / 2147

页数：5

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