Growth of AlGaN/GaN heterostructure on vicinal m-plane free-standing GaN substrates prepared by the Na flux method

被引：4

作者：

Isobe, Yasuhiro ^{[1
]}

Iida, Daisuke ^{[1
]}

Sakakibara, Tatsuyuki ^{[1
]}

Iwaya, Motoaki ^{[1
]}

Takeuchi, Tetsuya ^{[1
]}

Kamiyama, Satoshi ^{[1
]}

Akasaki, Isamu ^{[1
]}

Amano, Hiroshi ^{[2
]}

Imade, Mamoru ^{[3
]}

Kitaoka, Yasuo ^{[3
]}

Mori, Yusuke ^{[3
]}

机构：

[1] Meijo Univ, Fac Sci & Technol, Tempaku Ku, Nagoya, Aichi 4688502, Japan

[2] Nagoya Univ, Akasaki Res Ctr, Grad Sch Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan

[3] Osaka Univ, Grad Sch Elect Engn, Suita, Osaka 5650871, Japan

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2011年 / 208卷 / 05期

关键词：

GaN; growth; LPE-GaN substrate; miscut; MOVPE; nonpolar; FIELD-EFFECT TRANSISTOR; GATE; VOLTAGE;

D O I：

10.1002/pssa.201001019

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We fabricated and characterized AlGaN/GaN heterostructure growth by MOVPE on vicinal m-plane free-standing GaN substrates prepared by the Na flux method. The miscut angle in the LPE-GaN substrate has a great influence on the surface morphology and crystalline quality of epitaxial GaN and AlGaN films. In particular, AlGaN/GaN on a 48 miscut-angle LPE-GaN substrate shows large step bunching, small-miscut-angle LPE GaN substrate is essential for fabricating on FET structure with a flat surface. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：1191 / 1194

页数：4

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