Metal-insulator transitions and the effects of electron-electron interactions in two-dimensional electron systems

被引：79
|
作者：
Shashkin, AA [1 ]
机构：
[1] Russian Acad Sci, Inst Solid State Phys, Moscow 142432, Russia
来源：
PHYSICS-USPEKHI | 2005年 / 48卷 / 02期
关键词：
D O I：
10.1070/PU2005v048n02ABEH001944
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Experimental results on metal-insulator transitions and the anomalous properties of strongly interacting two-dimensional electron systems are reviewed and critically analyzed. Special attention is given to recent results on strongly enhanced spin susceptibility and effective mass in low-disordered silicon MOSFETs.
引用
收藏
页码：129 / 149
页数：21
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