AN INGAP/GAAS HBT POWER AMPLIFIER FOR 4.9-5.9 GHz WIRELESS-LAN APPLICATIONS

被引：0
|
作者：
Huang, Liang [1 ]
Zhang, Zhihao [1 ]
Li, Sizhen [1 ]
Zhang, Gary [1 ]
机构：
[1] Guangdong Univ Technol, Guangzhou 510006, Guangdong, Peoples R China
来源：
2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT) | 2014年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents an InGaP/GaAs HBT power amplifier (PA) for mobile terminals used in 4.9-5.9 GHz broadband wireless applications. The PA consists of a 3-stage structure for high gain. The inter-stage matching networks, which based on an analysis of a novel matching theory, were designed for efficiency and wideband. The output matching network was designed to have a reduced insertion loss and wideband operation. The fabricated PA achieved 26 dB small signal gain with less than 1 dB variation over the frequency range of 4.9-5.9 GHz. The PA also exhibited linear output power levels of 20.5 and 19.5 dBm at EVM values of 5.0% at 4.9GHz and 5.4GHz, respectively, measured with 54 Mb/s 64-QAM-OFDM signals at a supply voltage of 3.4 V.
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页数：3
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