Influence of substrate temperature on mechanical, optical and electrical properties of ZnO:Al films

被引:70
作者
Wen, Ruitao [1 ]
Wang, Laisen [1 ]
Wang, Xuan [1 ]
Yue, Guang-Hui [1 ]
Chen, Yuanzhi [1 ]
Peng, Dong-Liang [1 ]
机构
[1] Xiamen Univ, Dept Mat Sci & Engn, Coll Mat, Xiamen 361005, Peoples R China
基金
美国国家科学基金会;
关键词
Nanostructures; Thin films; Sputtering; Mechanical properties; High transparency; ZINC-OXIDE FILMS; TRANSPARENT; DEPENDENCE;
D O I
10.1016/j.jallcom.2010.08.034
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The Al-doped zinc oxide (ZnO:Al) films were prepared on quartz glass flakes and silicon wafers by radio frequency (RF) magnetron sputtering which uses an aluminum-doped zinc oxide ceramic target. Meanwhile, their properties were characterized by scanning electron microscopy, X-ray diffraction, infrared-UV spectrophotometry, resistance measurement, nano-scratch and indentation test. Evolutions of the structural, optical, electrical and mechanical properties of the ZnO:Al films as a function of substrate temperatures ranging from room temperature to 400 degrees C were analyzed. The results indicate that the ZnO:Al films with a low resistivity value of 4.97 x 10(-4) Omega cm, a relatively higher adhesion and a high transparency above 90%, can be prepared at a substrate temperature of 400 degrees C. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码:370 / 374
页数:5
相关论文
共 20 条
  • [1] ANOMALOUS OPTICAL ABSORPTION LIMIT IN INSB
    BURSTEIN, E
    [J]. PHYSICAL REVIEW, 1954, 93 (03): : 632 - 633
  • [2] Formation of Al-doped ZnO films by de magnetron reactive sputtering
    Chen, M
    Pei, ZL
    Sun, C
    Wen, LS
    Wang, X
    [J]. MATERIALS LETTERS, 2001, 48 (3-4) : 194 - 198
  • [3] Fabrication and characterization of transparent conductive ZnO:Al thin films prepared by direct current magnetron sputtering with highly conductive ZnO(ZnAl2O4) ceramic target
    Fang, GJ
    Li, DJ
    Yao, BL
    [J]. JOURNAL OF CRYSTAL GROWTH, 2003, 247 (3-4) : 393 - 400
  • [4] Effect of substrate-induced strain on the structural, electrical, and optical properties of polycrystalline ZnO thin films
    Ghosh, R
    Basak, D
    Fujihara, S
    [J]. JOURNAL OF APPLIED PHYSICS, 2004, 96 (05) : 2689 - 2692
  • [5] Improved conductivity and mechanism of carrier transport in zinc oxide with embedded silver layer
    Han, H.
    Theodore, N. D.
    Alford, T. L.
    [J]. JOURNAL OF APPLIED PHYSICS, 2008, 103 (01)
  • [6] Manufacture of specific structure of aluminum-doped zinc oxide films by patterning the substrate surface
    Jiang, X
    Jia, CL
    Szyszka, B
    [J]. APPLIED PHYSICS LETTERS, 2002, 80 (17) : 3090 - 3092
  • [7] Orientation dependence of transport property and microstructural characterization of Al-doped ZnO ceramics
    Kaga, Hisashi
    Kinemuchi, Yoshiaki
    Yihnaz, Huseyin
    Watarl, Koji
    Nakano, Hirorni
    Nakano, Hiroshi
    Tanaka, Satoshi
    Makiya, Atsushi
    Kato, Zenji
    Uernatsu, Keizo
    [J]. ACTA MATERIALIA, 2007, 55 (14) : 4753 - 4757
  • [8] Mechanical properties of Al2O3-doped (2 wt.%) ZnO films
    Kuriki, Shina
    Kawashima, Toshitaka
    [J]. THIN SOLID FILMS, 2007, 515 (24) : 8594 - 8597
  • [9] Metal-oxide-semiconductor devices using Ga2O3 dielectrics on n-type GaN
    Lee, CT
    Chen, HW
    Lee, HY
    [J]. APPLIED PHYSICS LETTERS, 2003, 82 (24) : 4304 - 4306
  • [10] Influence of oxygen argon ratio on the structural, electrical, optical and thermoelectrical properties of Al-doped ZnO thin films
    Li, L.
    Fang, L.
    Chen, X. M.
    Liu, J.
    Yang, F. F.
    Li, Q. J.
    Liu, G. B.
    Feng, S. J.
    [J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2008, 41 (01) : 169 - 174