Proton-based total-dose irradiation effects on Cu/HfO2:Cu/Pt ReRAM devices

被引：50

作者：

Butcher, Brian ^{[1
]}

He, Xiaoli ^{[1
]}

Huang, Mengbing ^{[1
]}

Wang, Yan ^{[2
]}

Liu, Qi ^{[2
]}

Lv, Hangbing ^{[2
]}

Liu, Ming ^{[2
]}

Wang, Wei ^{[1
]}

机构：

[1] SUNY Albany, CNSE, Albany, NY 12203 USA

[2] Chinese Acad Sci, Lab Nanofabricat & Novel Devices Integrated Techn, Inst Microelect, Beijing 100029, Peoples R China

来源：

NANOTECHNOLOGY | 2010年 / 21卷 / 47期

基金：

美国国家科学基金会;

关键词：

RESISTIVE SWITCHING MEMORIES; FERROELECTRIC PZT CAPACITORS; GATE DIELECTRICS; RADIATION; RELIABILITY; MECHANISMS; HFO2;

D O I：

10.1088/0957-4484/21/47/475206

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The resistive switching properties of Cu-doped-HfO2-based resistive-random-access-memory (ReRAM) devices are investigated under proton-based irradiations with different high-range total doses of 1.5, 3 and 5 Giga-rad[Si]. The measurement results obtained immediately after irradiation demonstrate that the proton-based total dose will introduce significant variations in the operation voltages and resistance values. These effects are enhanced almost linearly when the dose increases from 1.5 to 5 Giga-rad[Si]. Furthermore, five days after irradiation, the electrical properties of the device rebound, resulting in reduced operation voltages and resistance values. This is consistent with the time-dependent super-recovery behavior observed previously in CMOS gate oxide. These results can be explained by the proton irradiation effect on the electron/hole trap density inside HfO2 and its impact on ReRAM device metallic filament formation-and-rupture, which is based on electrolyte theory.

引用

页数：5

共 29 条

[1] THE EFFECT OF IONIZING-RADIATION ON SOL-GEL FERROELECTRIC PZT CAPACITORS [J].