Influence of degradation on the electrical conduction process in ZnO and SnO2-based varistors

被引：24

作者：

Ponce, M. A. ^{[1
,2
]}

Ramirez, M. A. ^{[3
]}

Parra, R. ^{[1
,2
]}

Malagu, C. ^{[4
]}

Castro, M. S. ^{[2
]}

Bueno, P. R. ^{[1
,3
]}

Varela, J. A. ^{[3
]}

机构：

[1] Univ Mar del Plata, Inst Mat Sci & Technol INTEMA, Mar Del Plata, Buenos Aires, Argentina

[2] Natl Res Council CONICET, Mar Del Plata, Buenos Aires, Argentina

[3] Univ Estadual Paulista UNESP, Inst Chem, BR-14800900 Sao Paulo, Brazil

[4] Univ Ferrara, Dept Phys, I-44100 Ferrara, Italy

来源：

JOURNAL OF APPLIED PHYSICS | 2010年 / 108卷 / 07期

基金：

巴西圣保罗研究基金会;

关键词：

SNO2 BASED VARISTOR; NONOHMIC PROPERTIES; MICROSTRUCTURE; CAPACITANCE; BEHAVIOR; SYSTEMS;

D O I：

10.1063/1.3490208

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The conduction process during degradation, promoted by the application of fixed dc bias voltage at different temperatures (thermal steady states) and current pulses 8/20 mu s on ZnO and SnO2-based varistors, was studied comparatively in the present work. The electrical properties of the varistor systems were highly damaged after degradation with current pulse 8/20 mu s. Variations on the potential barrier height and donor concentration were calculated by fitting the experimental data from impedance spectroscopy measurements assuming the formation of Schottky barriers at the grain boundaries and electrical conduction to occur due to tunneling and thermionic emission. (C) 2010 American Institute of Physics. [doi:10.1063/1.3490208]

引用

页数：6

共 23 条

[1] Capacitance and resistance measurements of SnO2 thick-films [J].

Adolfo Ponce, Miguel ;

Castro, Miriam S. ;

Aldao, Celso M. .

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2009, 20 (01) :25-32

[2] SnO2, ZnO and related polycrystalline compound semiconductors:: An overview and review on the voltage-dependent resistance (non-ohmic) feature [J].

Bueno, Paulo R. ;

Varela, Jose A. ;

Longo, Elson .

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2008, 28 (03) :505-529

[3] A comparative study of thermal conductivity in ZnO- and SnO2-based varistor systems [J].

Bueno, PR ;

Varela, JA ;

Barrado, CM ;

Longo, E ;

Leite, ER .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2005, 88 (09) :2629-2631

[4] Nature of the Schottky-type barrier of highly dense SnO2 systems displaying nonohmic behavior [J].

Bueno, PR ;

de Cassia-Santos, MR ;

Leite, ER ;

Longo, E ;

Bisquert, J ;

Garcia-Belmonte, G ;

Fabregat-Santiago, F .

JOURNAL OF APPLIED PHYSICS, 2000, 88 (11) :6545-6548

[5] PREBREAKDOWN CONDUCTION IN ZINC-OXIDE VARISTORS - THERMIONIC OR TUNNEL CURRENTS AND ONE-STEP OR 2-STEP CONDUCTION PROCESSES [J].

CASTRO, MS ;

ALDAO, CM .

APPLIED PHYSICS LETTERS, 1993, 63 (08) :1077-1079

[6] NORMALIZED THERMIONIC-FIELD (T-F) EMISSION IN METAL-SEMICONDUCTOR (SCHOTTKY) BARRIERS [J].

CROWELL, CR ;

RIDEOUT, VL .

SOLID-STATE ELECTRONICS, 1969, 12 (02) :89-&

[7] Electrical conduction in SnO2 varistors [J].

Glot, A. B. ;

Gaponov, A. V. ;

Sandoval-Garcia, A. P. .

PHYSICA B-CONDENSED MATTER, 2010, 405 (02) :705-711

[8]

GLOT AB, 1989, INORG MATER+, V25, P274

[9]

GLOT AB, 2007, CERAMIC MAT RES TREN, P227

[10]

GLOT AB, 1991, MAT SCI MONOGRAPHS C, V66, P2171

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