Characterization of Electrodeposited Copper Sulphide Thin Films

Copper Sulphide (CuS) thin films were electrodeposited onto indium doped tin oxide coated conducting glass (ITO) substrates from an aqueous acidic bath containing CuSO4,Na2S2O3 and EDTA. The deposition mechanism was investigated using cyclic voltammetry. The appropriate potential region in which the formation of stoichiometric CuS thin films occurs was found to be -500 mV versus SCE and the solution pH was maintained at 3.0 +/- 0.1. X-ray diffraction studies revealed that the deposited films are found to be cubic structure with preferential orientation along (111) plane. Optical absorption measurements were used to estimate the band gap value of CuS thin films deposited at different bath temperatures. Surface morphology and film composition was analyzed using an energy dispersive x-ray analysis (EDAX) set up attached with scanning electron microscope (SEM), respectively. The experimental observations are discussed in detail.