Effects of annealing in oxygen and nitrogen atmosphere on FZ silicon wafers

被引：2

作者：

Gay, N ^{[1
]}

Floret, F ^{[1
]}

Martinuzzi, S ^{[1
]}

Roux, L ^{[1
]}

Arnould, J ^{[1
]}

Mathieu, G ^{[1
]}

机构：

[1] ZA PRADEAUX,ION BEAM SERV 101,F-13850 GREASQUE,FRANCE

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1996年 / 36卷 / 1-3期

关键词：

nitrogen; oxygen; annealing; silicon;

D O I：

10.1016/0921-5107(95)01291-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

F.Z. silicon wafers were submitted to high temperature annealings during long times in oxygen and in nitrogen atmosphere in order to reproduce the same treatments which are necessary to develop power and high voltage transistors or diodes. It is shown by electrical techniques (microwave detected photoconductivity decay and surface photovoltage) and by revelation techniques (scanning infrared microscope, X-ray topography, Fourier transformed infrared spectroscopy, chemical etchings) that annealings in nitrogen added to annealings in oxygen have a deleterious effect on the lifetime of minority carriers and can create dislocations and precipitates.

引用

页码：125 / 128

页数：4

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