Characteristics of polarization-doped N-face III-nitride light-emitting diodes

被引：22

作者：

Dong, Kexiu ^{[1
]}

Chen, Dunjun ^{[1
]}

Liu, Bin ^{[1
]}

Lu, Hai ^{[1
]}

Chen, Peng ^{[1
]}

Zhang, Rong ^{[1
]}

Zheng, Youdou ^{[1
]}

机构：

[1] Nanjing Univ, Sch Elect Sci & Engn, Key Lab Adv Photon & Elect Mat, Nanjing Natl Lab Microstruct, Nanjing 210093, Jiangsu, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 07期

关键词：

POWER; EFFICIENT;

D O I：

10.1063/1.3687181

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electrical and optical performances of N-face GaN-based light-emitting diodes ( LEDs) with polarization-induced p-type doping are investigated theoretically. In comparison with the polarization-doped metal-face LED, the N-face one exhibits significant improvements in the hole injection efficiency and electroluminescence intensity when the applied forward voltage exceeds a certain value. Simultaneously, a reversed quantum confined Stark effect is observed in the polarization-doped N-face LED. The detailed physical mechanisms are explained in terms of the calculated energy band diagrams, carrier transport, and distribution of electric field containing polarization filed and free-carrier screening field. (C) 2012 American Institute of Physics. [doi:10.1063/1.3687181]

引用

页数：3

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