Effect of annealing temperature on the structural and optical properties of Al-doped ZnO films by RF magnetron sputtering

被引：0

作者：

Wu, Yuebo ^{[1
,2
]}

Huang, Bo ^{[2
,3
]}

Zhang, Liangtang ^{[1
]}

Wu, Suntao ^{[2
]}

机构：

[1] Xiamen Univ, Dept Mech & Elect Engn, Xiamen 361005, Fujian, Peoples R China

[2] Xiamen Univ, Pen Tung Sah Mems Res Ctr, Xiamen 361005, Peoples R China

[3] Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China

来源：

THIN FILM PHYSICS AND APPLICATIONS, SIXTH INTERNATIONAL CONFERENCE | 2008年 / 6984卷

关键词：

AZO film; annealing; XRD; SEM; transmittance;

D O I：

10.1117/12.792374

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The Al-doped ZnO (AZO) films were deposited on the glass substrates by RF magnetron sputtering. After the deposition, the films were annealed in N-2 at several temperatures from 500 degrees C to 800 degrees C for 60 minutes respectively. The crystal structures of the AZO films were characterized and analyzed by X-ray diffraction. The surface morphologies of the films were observed by SEM. The transmission spectra of the films were measured using a spectrophotometer within the range from 200 to 800 nm at room temperature. The results indicate each of the films has a preferential c-axis orientation and the grain size increases with annealing temperature increasing. All the films exhibit a high transmittance in visible region and have sharp ultraviolet absorption characteristics.

引用

页数：4

共 16 条

[1] Effect of alumina doping on structural, electrical, and optical properties of sputtered ZnO thin films [J].

Bai, S. N. ;

Tseng, T. Y. .

THIN SOLID FILMS, 2006, 515 (03) :872-875

[2] Growth and optical characterization of ZnO thin films deposited on sapphire substrate by MOCVD technique [J].

El-Yadouni, A ;

Boudrioua, A ;

Loulergue, JC ;

Sallet, V ;

Triboulet, R .

OPTICAL MATERIALS, 2005, 27 (08) :1391-1395

[3]

GE CQ, 2006, J APPL OPT, V27, P40

[4] High conductivity and transparent ZnO:Al films prepared at low temperature by DC and MF magnetron sputtering [J].

Guillen, C. ;

Herrero, J. .

THIN SOLID FILMS, 2006, 515 (02) :640-643

[5] ZnO-channel thin-film transistors: Channel mobility [J].

Hoffman, RL .

JOURNAL OF APPLIED PHYSICS, 2004, 95 (10) :5813-5819

[6] Investigation of the annealing effects on the structural and optical properties of sputtered ZnO thin films [J].

Jung, M ;

Lee, J ;

Park, S ;

Kim, H ;

Chang, JH .

JOURNAL OF CRYSTAL GROWTH, 2005, 283 (3-4) :384-389

[7] Laser-induced nanowelding of gold nanoparticles [J].

Kim, SJ ;

Jang, DJ .

APPLIED PHYSICS LETTERS, 2005, 86 (03) :1-3

[8] Effects of doping concentration and annealing temperature on properties of highly-oriented al-doped ZnO films [J].

Kuo, SY ;

Chen, WC ;

Lai, FI ;

Cheng, CP ;

Kuo, HC ;

Wang, SC ;

Hsieh, WF .

JOURNAL OF CRYSTAL GROWTH, 2006, 287 (01) :78-84

[9] Effect of annealing treatment on the structural, optical, and electrical properties of Al-doped ZnO thin films [J].

Li Li ;

Fang Liang ;

Chen Ximing ;

Liu Gaobin ;

Liu Jun ;

Yang Fengfan ;

Fu Guangzong ;

Kong Chunyang .

RARE METALS, 2007, 26 (03) :247-253

[10] Structural, electrical and optical properties of Gd doped and undoped ZnO:Al (ZAO) thin films prepared by RF magnetron sputtering [J].

Lin, Wei ;

Ma, Ruixin ;

Shao, Wei ;

Liu, Bin .

APPLIED SURFACE SCIENCE, 2007, 253 (11) :5179-5183

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