Extraction of device parameters from dark current-voltage characteristics of PV devices

被引：12

作者：

Macabebe, Erees Q. B. ^{[1
]}

van Dyk, E. Ernest ^{[1
]}

机构：

[1] Nelson Mandela Metropolitan Univ, Dept Phys, ZA-6031 Port Elizabeth, South Africa

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 2 2008 | 2008年 / 5卷 / 02期

关键词：

D O I：

10.1002/pssc.200776834

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Solar cells are p-n junction diodes and are prone to parasitic resistances. High series resistances of a few ohms degrade the device performance, as do low shunt resistances. It is therefore necessary to determine these parameters since they are useful in analyzing performance losses. A method to extract these and other device parameters of solar cells from the dark current-voltage (I-V) characteristics is presented in this paper. The following parameters were determined using the proposed method: saturation current, series resistance, shunt resistance and the ideality factor. A program was created to implement-the, method which utilized the one-diode equivalent circuit model. Curve fitting was also employed to provide a graphical representation of the results. Evaluation of the method was done using simulated data and actual dark I-V data obtained from monocrystalline and multicrystalline silicon solar cells. The program algorithm is discussed and results are presented. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：616 / 619

页数：4

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