Pulsed laser deposition of Er3+-doped oxyfluoride thin films

被引：4

作者：

Martino, M ^{[1
]}

Caricato, AP

Fazzi, A

Romano, F

Tikhomirov, VK

Seddon, AB

Mattarelli, M

Chiappini, A

Vishnubhatla, KC

机构：

[1] Univ Lecce, Dept Phys, Lecce Laser Lab Lecce, I-73100 Lecce, Italy

[2] Univ Nottingham, Sch Mech Mat Mfg Engn & Management, Nottingham NG7 2RD, England

[3] Univ Trent, Dipartimento Fis, I-38050 Trento, Italy

[4] INFM, CSMFO Grp, I-38050 Trento, Italy

[5] Univ Hyderabad, Sch Phys, Hyderabad 500046, Andhra Pradesh, India

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2005年 / 351卷 / 21-23期

关键词：

D O I：

10.1016/j.jnoncrysol.2005.04.021

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Modern optical telecommunication requires materials having a broad emission band centered on 1.5 mu m to use as optical amplifier in WDM systems. Oxyfluoride glass demonstrate characteristics to satisfy this demand. Thin films of Er3+-doped oxyfluoride glass have been produced by Pulsed laser deposition technique using a KrF pulsed excimer laser and low-pressure (1-10 Pa) oxygen atmosphere. The optical transmission, the dispersion of refractive index and extinction coefficient, the guided optical modes and the film thickness have been investigated by different techniques. The best result was found at an oxygen pressure of 10 Pa, in which case the refractive index of the bulk and film were very close. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：1810 / 1813

页数：4

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