Dynamics of formation of defects in annealed InP

被引：0
|
作者：
Han, YJ [1 ]
Liu, XL [1 ]
Jiao, JH [1 ]
Lin, LY [1 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
来源：
INTEGRATED OPTOELECTRONICS II | 1998年 / 3551卷
关键词：
defects formation; hydrogen related defects; semi-insulating; InP;
D O I：
10.1117/12.317975
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Dynamics of formation of defects in the annealed nominally undoped semi-insulating InP obtained by high pressure, high temperature annealing of high purity materials is proposed. Incorporated hydrogen passivates vacancy at indium site from annihilation forming fully hydrogenated indium vacancy which dissociates leaving large lattice relaxation behind, deep donors, mainly larger complexes involving phosphorus at indium site and isolated hydrogen defects are created in nominally undoped InP after annealing. Also created are acceptor levels such as vacancy at indium site. Carrier charge compensation mechanism in nominally undoped InP upon annealing at high temperature is given. Microscopic models of hydrogen related defects are given. Structural, electronic and vibrational properties of LVMs related to hydrogen as well as their temperature effect are discussed.
引用
收藏
页码：5 / 8
页数：4
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