Design of gallium nitride resonant cavity light-emitting diodes on Si substrates

被引：27

作者：

Mastro, Michael A. ^{[1
]}

Caldwell, Joshita D. ^{[1
]}

Holm, Ron T. ^{[1
]}

Henry, Rich L. ^{[1
]}

Eddy, Charles R., Jr. ^{[1
]}

机构：

[1] USN, Res Lab, Div Elect Sci & Technol, Washington, DC 20375 USA

来源：

ADVANCED MATERIALS | 2008年 / 20卷 / 01期

关键词：

D O I：

10.1002/adma.200701683

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A GaN resonant cavity light emitting diode was built on a GaN/AlN distributed Bragg reflector grown on a silicon substrate. The electroluminescence output increased by 2.5 times for a GaN diode coupled to a properly designed resonant cavity. Theoretical calculations showed that this enhancement could increase up to four times for transmission through a semi-transparent metal contact design, and up to eight times for a flip-chip design.

引用

页码：115 / +

页数：5

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