InAs/GaAs quantum-dot saturable absorber for a diode-pumped passively mode-locked Nd:YVO4 laser at 1342 nm

被引：29

作者：

Su, KW ^{[1
]}

Lai, HC ^{[1
]}

Li, A ^{[1
]}

Chen, YF ^{[1
]}

Huang, KE ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 30050, Taiwan

来源：

OPTICS LETTERS | 2005年 / 30卷 / 12期

关键词：

D O I：

10.1364/OL.30.001482

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report that lnAs/GaAs quantum dots were developed to be saturable absorbers as well as output couplers in diode-pumped passively mode-locked Nd:YVO4 lasers at 1342 nm. With an incident pump power of 12.6 W, an average output power of 0.85 W with a mode-locked pulse width of 26 ps at a repetition rate of 152 MHz was obtained. (c) 2005 Optical Society of America

引用

页码：1482 / 1484

页数：3

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