UV-Ozone Process for Film Densification of Solution-Processed InGaZnO Thin-Film Transistors

被引：18

作者：

Su, Bo-Yuan ^{[1
]}

Cheng, An-Hsiu ^{[1
]}

Wu, Jia-Ling ^{[1
]}

Lin, Chun-Cheng ^{[1
]}

Tang, Jian-Fu ^{[1
]}

Chu, Sheng-Yuan ^{[1
]}

Juang, Yung-Der ^{[2
]}

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan

[2] Natl Univ Tainan, Dept Mat Sci, Tainan, Taiwan

来源：

JOURNAL OF DISPLAY TECHNOLOGY | 2015年 / 11卷 / 01期

关键词：

Amorphous InGaZnO (IGZO); sol-gel; ultraviolet (UV)-ozone; TEMPERATURE FABRICATION; EFFICIENCY ENHANCEMENT; BUFFER LAYER; OXIDE; PERFORMANCE; STABILITY;

D O I：

10.1109/JDT.2014.2354364

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effects of ultraviolet (UV)-ozone treatment on solution-processed amorphous InGaZnO (IGZO) thin-film transistors (TFTs) grown using the sol-gel method are investigated. The UV-ozone-treated TFT devices showed an improved field-effect mobility of 1.52 cm(2).V-1 s(-1) and a subthreshold slope (S) of 0.42 V/dec compared to those of IGZO TFT devices with only thermal annealing (0.75 cm(2).V-1 s(-1) and 0.84 V/dec, respectively). The enhancement of the UV-ozone-treated TFTs is mostly attributed to the increased film packing density, higher Al S/D electrodes adhesion properties, reduced oxygen-related defects, and less electron trapping of the IGZO thin films, which improved the TFT performance and bias stress stability.

引用

页码：6 / 12

页数：7

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