Development of a rapid and automated TEM sample preparation method in semiconductor failure analysis and the study of the relevant TEM artifact

被引：20

作者：

Dai, JY ^{[1
]}

Tee, SF ^{[1
]}

Tay, CL ^{[1
]}

Song, ZG ^{[1
]}

Ansari, S ^{[1
]}

Er, E ^{[1
]}

Redkar, S ^{[1
]}

机构：

[1] Chartered Semicond Mfg Ltd, QRA FA, Singapore 738406, Singapore

来源：

MICROELECTRONICS JOURNAL | 2001年 / 32卷 / 03期

关键词：

TEM sample; focused ion beam; semiconductor;

D O I：

10.1016/S0026-2692(00)00124-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Automated TEM sample preparation using focused ion beam (FIB) followed by plucking has been proposed to be a fast and reliable method in semiconductor failure analysis with extremely short cycle time needs. Artifacts caused by sample supporting film to image quality, energy dispersive X-ray (EDX) and electron energy loss spectrum (EELS) analysis are discussed. Damage (amorphizing) to sample surface induced by Ga+ ion beam implantation during Pt protection film deposition was proved by TEM observation, and the method to avoid this damage are proposed. (C) 2001 Elsevier Science Ltd. All rights reserved.

引用

页码：221 / 226

页数：6

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