Polyimide planarization for RF-MEMS switches on PCB

被引:0
|
作者
Ghodsian, B [1 ]
Jung, C [1 ]
Cetiner, BA [1 ]
De Flaviis, F [1 ]
机构
[1] Univ Calif Irvine, Dept Elect & Comp Engn, Irvine, CA 92697 USA
关键词
RF-MEMS switch; PCB; polyimide;
D O I
10.1109/ICSENS.2004.1426238
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
This abstract describes an improved manufacturing technology for fabrication of RF-MEMS switches on PCB. The 17.5 mu m thick copper layer is patterned and planarized using polyimide. The use of polyimide reduces formation of voids in sacrificial photoresist. Fabricated switches demonstrate low insertion-loss (< 0.06dB at 10GHz) and good isolation (> 20dB at 10GHz).
引用
收藏
页码:605 / 606
页数:2
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