Effect of Mo doping on phase change performance of Sb2Te3 *

被引：9

作者：

Liu, Wan-Liang ^{[1
,2
]}

Chen, Ying ^{[1
,2
]}

Li, Tao ^{[1
,2
]}

Song, Zhi-Tang ^{[1
]}

Wu, Liang-Cai ^{[3
,4
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China

[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China

[3] Donghua Univ, Coll Sci, Shanghai 201620, Peoples R China

[4] Minist Educ, Magnet Confinement Fus Res Ctr, Beijing, Peoples R China

来源：

CHINESE PHYSICS B | 2021年 / 30卷 / 08期

基金：

中国国家自然科学基金;

关键词：

phase-change memory; Sb2Te3; thin films; nanocomposites; FILMS;

D O I：

10.1088/1674-1056/abe22d

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Mo, as a dopant, is doped into SbTe to improve its thermal stability. It is shown in this paper that the Mo-doped Sb2Te3 (Mo0.26Sb2Te3, MST) material possesses phase change memory (PCM) applications. MST has better thermal stability than Sb2Te3(ST) and will crystallize only when the annealing temperature is higher than 250 degrees C. With the good thermal stability, MST-based PCM cells have a fast crystallization time of 6 ns. Furthermore, endurance up to 4 x 10(5) cycles with a resistance ratio of more than one order of magnitude makes MST a promising candidate for PCM applications.

引用

页数：4

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