An optical parametric Bragg amplifier on a CMOS chip

被引：12

作者：

Choi, Ju Won ^{[1
]}

Sohn, Byoung-Uk ^{[1
]}

Sahin, Ezgi ^{[1
]}

Chen, George F. R. ^{[1
]}

Xing, Peng ^{[1
]}

Ng, Doris K. T. ^{[2
]}

Eggleton, Benjamin J. ^{[3
,4
]}

Tan, Dawn T. H. ^{[1
,2
]}

机构：

[1] Singapore Univ Technol & Design, Photon Devices & Syst Grp, 8 Somapah Rd, Singapore 487372, Singapore

[2] ASTAR, Inst Microelect, 2 Fusionopolis Way,08-02 Innovis Tower, Singapore 138634, Singapore

[3] Univ Sydney, Sch Phys, Inst Photon & Opt Sci, Sydney, NSW 2006, Australia

[4] Univ Sydney, Univ Sydney Nano Inst Sydney Nano, Sydney, NSW 2006, Australia

来源：

NANOPHOTONICS | 2021年 / 10卷 / 13期

基金：

新加坡国家研究基金会;

关键词：

Bragg gratings; CMOS compatible devices; four-wave mixing; nonlinear optics; parametric amplification; silicon-rich-nitride; PULSE-COMPRESSION; AMPLIFICATION; GAIN; NITRIDE; PROPAGATION; GENERATION;

D O I：

10.1515/nanoph-2021-0302

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We demonstrate a complementary metal-oxide-semiconductor (CMOS)-compatible optical parametric Bragg amplifier on an ultra-silicon-rich nitride chip. The amplifier design incorporates advantageous group index properties in a nonlinear Bragg grating to circumvent phase matching limitations arising from the bulk material and waveguide dispersion. The grating structure further augments the effective nonlinear parameter of 800 W-1/m, considerably lowering the power required for the observation of strong parametric gain. On/off optical parametric gain of 20 dB is achieved using a low peak power of 1.6 W, in good agreement with numerical calculations. This represents a 7 dB improvement in the parametric gain compared to the absence of grating enhancement which is attributed to the Bragg grating induced superior phase matching.

引用

页码：3507 / 3518

页数：12

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