Bismuth doping effect on the phase-change characteristics of nitrogen-doped GeTe films

被引：7
作者：
Kim, Ki-Hong [2 ]
Choi, Sang-Jun [1 ]
Park, Ju-Cheol [3 ]
机构：
[1] Samsung Elect Co Ltd, Syst LSI, Yongin 446712, South Korea
[2] Samsung Elect Co Ltd, AE Grp, Corp Technol Operat SAIT, Yongin 446712, South Korea
[3] Seoul Natl Univ, Res Inst Adv Mat, Seoul 151744, South Korea
来源：
THIN SOLID FILMS | 2010年 / 519卷 / 02期
关键词：
Germanium telluride; Bismuth; Phase change; Nitrogen doping; Diffusion; Annealing; Transmission electron microscopy; X-ray diffraction; THIN-FILM; GE2SB2TE5; TRANSITION; MEMORY;
D O I：
10.1016/j.tsf.2010.08.118
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The microstructures and electrical properties of 8 4% nitrogen-doped GeTe and GeBi(6 at.%)Te films thermally annealed in N-2 atmosphere were investigated With the addition of Bi to N-doped GeTe films the initial crystallization temperature was reduced and crystallization speed slowed The N-doped GeBiTe films showed a rapid increase in crystallite size compared to the N-doped GeTe films The formation energy of the nucleus may be lower due to the Bi atoms and the growth speed may be slower (C) 2010 Elsevier B V All rights reserved
引用
收藏
页码：686 / 689
页数：4
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