Impact of scattering in 'atomistic' device simulations

被引：13

作者：

Alexander, C ^{[1
]}

Brown, AR ^{[1
]}

Watling, JR ^{[1
]}

Asenov, A ^{[1
]}

机构：

[1] Univ Glasgow, Device Modelling Grp, Dept Elect & Elect Engn, Glasgow G12 8LT, Lanark, Scotland

来源：

SOLID-STATE ELECTRONICS | 2005年 / 49卷 / 05期

关键词：

trapped charge; atomistic; Monte Carlo; drift-diffusion;

D O I：

10.1016/j.sse.2004.10.012

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, by comparison of Drift-Diffusion and Monte Carlo simulation results, we investigate the impact of Coulombic scattering in atomistic device simulations and its contribution to the random dopant induced intrinsic parameter fluctuations in nano-CMOS devices. By introducing ionised impurity scattering directly into the Monte Carlo simulations through the full impurity potential, we resolve the contribution of the variation in scattering on the random dopant induced current variation. In comparison, Drift-Diffusion simulations are only able to capture the corresponding electrostatic effects. This approach is first demonstrated for the simple case of a single scattering centre in the channel of a MOSFET and then used to compare current variations in a set of devices with atomistic doping. (c) 2005 Elsevier Ltd. All rights reserved.

引用

页码：733 / 739

页数：7

共 20 条

[1] Mesh-based particle simulation of sub-0.1 micron FETs [J].

Arokianathan, C ;

Asenov, A ;

Davies, J .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1998, 13 (8A) :A173-A176

[2]

Arokianathan C. R., 1998, VLSI Design, V8, P331, DOI 10.1155/1998/76027

[3] Hierarchical approach to "atomistic" 3-D MOSFET simulation [J].

Asenov, A ;

Brown, AR ;

Davies, JH ;

Saini, S .

IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 1999, 18 (11) :1558-1565

[4] Random dopant induced threshold voltage lowering and fluctuations in sub-0.1 μm MOSFET's:: A 3-D "atomistic" simulation study [J].

Asenov, A .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (12) :2505-2513

[5] Simulation of intrinsic parameter fluctuations in decananometer and nanometer-scale MOSFETs [J].

Asenov, A ;

Brown, AR ;

Davies, JH ;

Kaya, S ;

Slavcheva, G .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (09) :1837-1852

[6] RTS amplitudes in decananometer MOSFETs: 3-D Simulation Study [J].

Asenov, A ;

Balasubramaniam, R ;

Brown, AR ;

Davies, JH .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (03) :839-845

[7] Short-range and long-range Coulomb interactions for 3D Monte Carlo device simulation with discrete impurity distribution [J].

Barraud, S ;

Dollfus, P ;

Galdin, S ;

Hesto, P .

SOLID-STATE ELECTRONICS, 2002, 46 (07) :1061-1067

[8] Effect of discrete impurities on electron transport in ultrashort MOSFET using 3-D MC simulation [J].

Dollfus, P ;

Bournel, A ;

Galdin, S ;

Barraud, S ;

Hesto, P .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2004, 51 (05) :749-756

[9]

Frank D. J., 1999, 1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325), P169, DOI 10.1109/VLSIT.1999.799397

[10] A novel approach for introducing the electron-electron and electron-impurity interactions in particle-based simulations [J].

Gross, WJ ;

Vasileska, D ;

Ferry, DK .

IEEE ELECTRON DEVICE LETTERS, 1999, 20 (09) :463-465

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