Real-Space Visualization of Energy Loss and Carrier Diffusion in a Semiconductor Nanowire Array Using 4D Electron Microscopy

被引：31

作者：

Bose, Riya ^{[1
]}

Sun, Jingya ^{[1
]}

Khan, Jafar I. ^{[1
]}

Shaheen, Basamat S. ^{[1
]}

Adhikari, Aniruddha ^{[1
]}

Ng, Tien Khee ^{[2
]}

Burlakov, Victor M. ^{[3
]}

Parida, Manas R. ^{[1
]}

Priante, Davide ^{[2
]}

Goriely, Alain ^{[3
]}

Ooi, Boon S. ^{[2
]}

Bakr, Osman M. ^{[1
]}

Mohammed, Omar F. ^{[1
]}

机构：

[1] KAUST, Div Phys Sci & Engn, Solar & Photovolta Engn Res Ctr, Thuwal 239556900, Saudi Arabia

[2] KAUST, Comp Elect & Math Sci & Engn, Photon Lab, Thuwal 239556900, Saudi Arabia

[3] Univ Oxford, Math Inst, Woodstock Rd, Oxford OX2 6GG, England

来源：

ADVANCED MATERIALS | 2016年 / 28卷 / 25期

关键词：

LIGHT-EMITTING-DIODES; SILICON NANOWIRES; DYNAMICS; HETEROSTRUCTURES; RECOMBINATION; TRANSPORT; SURFACES; LIFETIME;

D O I：

10.1002/adma.201600202

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A breakthrough in the development of 4D scanning ultrafast electron microscopy is described for real-time and space imaging of secondary electron energy loss and carrier diffusion on the surface of an array of nanowires as a model system, providing access to a territory that is beyond the reach of either static electron imaging or any time-resolved laser spectroscopy.

引用

页码：5106 / 5111

页数：6

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