Structural and magnetic properties of copper oxide films deposited by DC magnetron reactive sputtering

被引：14

作者：

Radjehi, L. ^{[1
]}

Djelloul, A. ^{[1
]}

Bououdina, M. ^{[2
]}

Siab, R. ^{[3
]}

Tebib, W. ^{[3
]}

机构：

[1] Khenchela Univ, Lab Struct Proprietes & Interact Inter Atom LASPI, Khenchela 40000, Algeria

[2] Univ Bahrain, Dept Phys, Coll Sci, POB 32038, Zallaq, Bahrain

[3] El Tarf Univ, Lab Physicochim Mat LPCM, El Tarf 36000, Algeria

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2018年 / 124卷 / 10期

关键词：

THIN-FILMS; ROOM-TEMPERATURE; CU2O; NANOPARTICLES; TARGET; COST;

D O I：

10.1007/s00339-018-2141-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Copper oxide films have been successfully deposited onto glass/Si(100) substrates by DC reactive magnetron sputtering in Ar/O-2 gas mixtures, while varying oxygen flow rate. The obtained results based on the structure and magnetic properties are discussed. Depending on the oxygen flow rate, the films reveal different phases and morphologies of Cu2O, Cu4O3 and CuO. In addition, the magnetic properties of the copper oxides thin films are found to be strongly influenced by the oxygen flow rate; the ferro-para transition is influenced by the formation/cancellation of point defects.

引用

页数：5

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