Electric field modulation of tunneling anisotropic magnetoresistance in tunnel junctions with antiferromagnetic electrodes

被引：3
作者：
Goto, Minori [1 ]
Nawaoka, Kohei [1 ]
Miwa, Shinji [1 ]
Hatanaka, Shohei [1 ]
Mizuochi, Norikazu [1 ]
Suzuki, Yoshishige [1 ]
机构：
[1] Osaka Univ, Grad Sch Engn, Toyonaka, Osaka 5608531, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2016年 / 55卷 / 08期
关键词：
MAGNETIC-ANISOTROPY; EXCHANGE; SYSTEM; LAYERS; FE;
D O I：
10.7567/JJAP.55.080304
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We present electric field modulation of tunneling anisotropic magnetoresistance (TAMR) in MnIr vertical bar MgO vertical bar Ta tunnel junctions. TAMR enables direct observation of the antiferromagnetic spin direction at the MnIr vertical bar MgO interface. We found that the shape of magnetoresistance (MR) curve can be modulated by an electric field, which can be explained by electric field modulation of the interfacial magnetic anisotropy at MnIr vertical bar MgO. (C) 2016 The Japan Society of Applied Physics
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页数：4
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