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Room temperature toluene gas sensor based on TiO2 nanoparticles decorated 3D graphene-carbon nanotube nanostructures
被引:160
|作者:
Seekaew, Yotsarayuth
[1
]
Wisitsoraat, Anurat
[2
]
Phokharatkul, Ditsayut
[2
]
Wongchoosuk, Chatchawal
[1
]
机构:
[1] Kasetsart Univ, Fac Sci, Dept Phys, Bangkok 10900, Thailand
[2] Natl Elect & Comp Technol Ctr, Carbon Based Devices & Nanoelect Lab, Klongluang 12120, Pathumthani, Thailand
关键词:
3D carbon nanostructures;
Toluene gas sensor;
Pillared graphene;
Sparking method;
TiO2;
decoration;
HYBRID FOAM;
SENSING PERFORMANCE;
OXIDE;
STORAGE;
FILMS;
ELECTRODES;
FORMALDEHYDE;
SENSITIVITY;
FABRICATION;
PEDOTPSS;
D O I:
10.1016/j.snb.2018.09.095
中图分类号:
O65 [分析化学];
学科分类号:
070302 ;
081704 ;
摘要:
This work presents a highly sensitive room-temperature gas sensor based on 3D titanium dioxide/graphene-carbon nanotube (3D TiO2/G-CNT) fabricated by chemical vapor deposition and sparking methods. Characterizations by scanning electron microscopy, X-ray photoelectron spectroscopy, Raman spectroscopy and Transmission electron microscopy confirmed the formation of 3D graphene-carbon nanotube nanostructures decorated with TiO2 nanoparticles. The toluene detection performances of 3D TiO2/G-CNT structures with varying Ti sparking times were investigated in comparison with 3D G-CNT, TiO2-CNT, graphene and CNTs at room temperature. From result, the optimal sparking time of 60 s led to an optimal sensor response of 42%-500 ppm at room temperature. In addition, the optimal 3D TiO2/G-CNT exhibited substantially higher toluene response, sensitivity and selectivity than 3D G-CNT, TiO2-CNT, graphene and CNTs over a low concentration range of 50-500 ppm. The toluene-sensing mechanisms of 3D titanium dioxide/graphene-carbon nanotube nanostructures were proposed based on the formation of Schottky metal-semiconductor junctions between metallic 3D graphene-carbon nanotube structures and n-type semiconducting titanium dioxide nanoparticles due to the adsorption of toluene molecules via low-temperature reducing reactions or direct charge transfer process.
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页码:69 / 78
页数:10
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