未找到相关数据
High heat-resistant (250°C) epoxy resin composites with excellent dielectric properties
被引：5
作者：
Wang, Chunbiao
[1
,2
]
Feng, Yu
[1
,2
]
Zhang, Changhai
[1
,2
]
Zhang, Tiandong
[1
,2
]
Chi, Qingguo
[1
,2
]
Chen, Qingguo
[1
,2
]
Lei, Qingquan
[1
,2
]
机构：
[1] Harbin Univ Sci & Technol, Key Lab Engn Dielect & Its Applicat, Minist Educ, Harbin, Peoples R China
[2] Harbin Univ Sci & Technol, Sch Elect & Elect Engn, Harbin, Peoples R China
基金：
黑龙江省自然科学基金;
中国博士后科学基金;
关键词：
dielectric properties;
glass transition;
packaging;
thermal properties;
thermosets;
OLIGOMERIC SILSESQUIOXANE;
IMPROVEMENT;
D O I：
10.1002/app.52963
中图分类号：
O63 [高分子化学（高聚物）];
学科分类号：
070305 ;
080501 ;
081704 ;
摘要：
Insulated gate bipolar transistor (IGBT) is the core of electric energy conversion and circuit control, which is widely used in the field of electric vehicles. Higher service temperature, higher power density, and higher operating voltage are the tendency for IGBT in which packing materials have to possess more stable temperature resistance and better insulating properties. In this work, cyanate ester (CE) and polyhedral oligomeric silsesquioxanes (POSS) are introduced into epoxy with various filling ratio to improve the dielectric and thermal properties. The curing process of every system is determined by non-isothermal differential scanning calorimetry (DSC). N and Si element distribution mappings indicate that there are good compatibility between POSS, CE, and epoxy. The dielectric test shows that the dielectric constant decreases from 4.34 to 2.84 at 1 MHz and from 4.76 to 2.93 at 1 kHz when the filling ratio is 60 wt%. Meanwhile, the DC breakdown strength increases from 172.7 to 286.4 kV/mm. Furthermore, the glass transition temperature (T-g) increases from 180 to 263 degrees C and the yield of residual carbon increases from 6.2% to 23.7%. A new packing material, which can endure 250 degrees C of operating temperature and has excellent dielectric properties has been synthesized.
引用
收藏
页数：10
相关论文
未找到相关数据