Spin-Carrying Naphthalenediimide and Perylenediimide Derivatives

被引:11
作者
Nakatsuji, Shin'ichi [1 ]
Aoki, Kazunori [1 ]
Akutsu, Hiroki [1 ]
Yamada, Jun-ichi [1 ]
Kojima, Takahiro [2 ]
Nishida, Jun-ichi [2 ]
Yamashita, Yoshiro [2 ]
机构
[1] Univ Hyogo, Grad Sch Mat Sci, Kamigori, Hyogo 6781297, Japan
[2] Tokyo Inst Technol, Interdisciplinary Grad Sch Sci & Engn, Yokohama, Kanagawa 2268502, Japan
关键词
FIELD-EFFECT TRANSISTORS; THIN-FILM TRANSISTORS; CHANNEL ORGANIC SEMICONDUCTORS; HIGH-ELECTRON-MOBILITY; BUILDING-BLOCKS; DIIMIDE DERIVATIVES; RADICAL COMPOUNDS; FET PROPERTIES; PERFORMANCE;
D O I
10.1246/bcsj.20100114
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
A couple of naphthalenediimide 4 and 5 and series of perylenediimide derivatives 6-9 carrying TEMPO radical were prepared and their redox, FET, and magnetic properties were investigated. The radical compounds 4 and 6-9 were found to show antiferromagnetic interactions obeying the Curie-Weiss model, while the naphthalenediimide derivative 5 exhibited a singlet-triplet magnetic behavior and it could be well understood by the short oxygen-to-oxygen distance between the spin centers observed in its crystal structure. Owing presumably to their appropriate reduction potentials and structural motifs, exhibitions of n-type FET properties were disclosed in these radical compounds with mobilities of the order from 10(-5) to 10(-8) cm(2) V-1 s(-1) and apparent increase of mobilities was observed in the radical compounds Sand 7 by the surface treatment with HMDS.
引用
收藏
页码:1079 / 1085
页数:7
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