Thermal behavior of 1.55 μm (100) InAs/InP-Based Quantum Dot Lasers

被引：0
|
作者：
Sayid, Sayid A. [1 ]
Marko, Igor P. [1 ]
Adams, Alfred R. [1 ]
Sweeney, Stephen J. [1 ]
Barrios, Pedro [2 ]
Poole, Philip [2 ]
机构：
[1] Univ Surrey, Adv Technol Inst, Surrey GU2 7XH, England
[2] Natl Res Council Canada, Inst Microstruct Sci, Ottawa K1A 0R6, ON, Canada
来源：
22ND IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE | 2010年
关键词：
TEMPERATURE; RECOMBINATION; DEPENDENCE; PRESSURE;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Unlike InAs/GaAs quantum dot lasers, in 1.55 mu m InAs/InP devices, non-radiative recombination dominates device behavior from very low temperature (similar to 40K) and accounts for similar to 94% of J(th) at room temperature with a T-o of similar to 72K from 220K-290K.
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页码：75 / +
页数：2
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