STM Tip-Induced Switching in Molybdenum Disulfide-Based Atomristors

被引：2
作者：
Thompson, Jesse E. [1 ,2 ]
Blue, Brandon T. [1 ,2 ]
Smalley, Darian [1 ,2 ]
Torres-Davila, Fernand [1 ,2 ]
Tetard, Laurene [1 ,2 ]
Robinson, Jeremy T. [3 ]
Ishigami, Masahiro [1 ,2 ]
机构：
[1] Univ Cent Florida, Dept Phys, Orlando, FL 32826 USA
[2] Univ Cent Florida, Nanosci Technol Ctr, Orlando, FL 32826 USA
[3] Naval Res Lab, Washington, DC 20375 USA
来源：
MRS ADVANCES | 2019年 / 4卷 / 48期
关键词：
2D materials; devices; graphene; scanning tunneling microscopy (STM); LOW-POWER; GRAPHENE; MEMRISTOR; GRAPHITE; MOS2;
D O I：
10.1557/adv.2019.322
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Scanning tunneling microscopy and spectroscopy (STM/STS) are used to electronically switch atomically-thin memristors, referred to as "atomristors", based on a graphene/molybdenum disulfide (MoS2)/Au heterostructure. A gold-assisted exfoliation method was used to produce near-millimeter (mm) scale MoS2 on Au thin-film substrates, followed by transfer of a separately exfoliated graphene top layer. Our results reveal that it is possible to switch the conductivity of a graphene/MoS2/Au memristor stack using an STM tip. These results provide a path to further studies of atomically-thin memristors fabricated from heterostructures of two-dimensional materials such as graphene and transition metal dichalcogenides (TMDs).
引用
收藏
页码：2609 / 2617
页数：9
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