Design and comparison of 4-kV neutral-point-clamped, flying-capacitor, and series-connected H-Bridge multilevel converters

This paper describes the design of a (4-kV, 4.16-MVA) three-level neutral-point-clamped-, three-level flying-capacitor-, four-level flying-capacitor-, and nine-level series-connected H-bridge voltage-source converter on the basis of state-of-the-art 6.5-, 4.5-, 3.3- and 1.7-kV insulated gate bipolar transistors. The semiconductor loss distribution and the design of semiconductors and passive components are compared for a medium switching frequency assuming a constant converter efficiency of about 99%. To evaluate the converter characteristics in high switching frequency applications, a second comparison is realized for the maximum switching frequencies assuming a constant expense of semiconductors in all converters.