An improved strained-Si on Si1-xGex MOSFET mobility model

被引：0
|
作者：
Zhao, Y [1 ]
Zhang, DW [1 ]
Tian, LL [1 ]
机构：
[1] Tsing Hua Univ, Inst Microelect, Beijing 100084, Peoples R China
来源：
2004: 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, VOLS 1- 3, PROCEEDINGS | 2004年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new electron and hole mobility analytical model for strained-Si MOSFETs has been developed. The mobility enhancement in the strained silicon layer is accurately studied and described by means of simple analytical expressions. The dependence of mobility to Strained-Si layer thickness in the model is highlighted, and as usual, the germanium mole fraction, surface roughness and the channel doping concentration are needed in the model. The model fits well extracted mobility, data based on drain current measurements and Monte Carlo simulation results.
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页码：1216 / 1219
页数：4
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