Enhanced high-speed photoresponse by diffusion of iron into undoped semi-insulating GaAs

被引：0

作者：

Ohsawa, J ^{[1
]}

Ozaki, Y ^{[1
]}

机构：

[1] Toyota Technol Inst, Tempaku Ku, Nagoya, Aichi 4688511, Japan

来源：

SIMC-XI: 2000 INTERNATIONAL SEMICONDUCTING AND INSULATING MATERIALS CONFERENCE, PROCEEDINGS | 2000年

关键词：

D O I：

10.1109/SIM.2000.939218

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Responses to picosecond tight pulses have been compared on undoped LEC semi-insulating wafers with and without iron doping. Larger photocurrent, especially at the leading edge, for the iron-doped one Is reasonable because of increased hole capturing by added deep acceptors of iron, as well as decreased electron capturing caused by a concomitant decrease of deep donors such as EL2 and EL6. This was confirmed by the photocurrent decay at higher excitation, which is dominated by electrons in iron-doped case in contrast to holes in undoped case.

引用

页码：159 / 162

页数：4

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